Hole array enhanced dual-band infrared photodetection

Photonic structures have been attracting more attention due to their ability capture, concentrate and propagate optical energy. In this work, we propose a photon-trapping hole-array structure integrated in nip InAsSb-GaSb heterostructure for the enhancement of photoresponse both near- mid-infrared regions. The proposed symmetrical hole array can increase photon lifetime inside absorption layer reduce reflection without polarization dependence. Significant enhancements photoelectric conversion efficiency are demonstrated dual bands unpolarized incidence. factors responsivity at room temperature under zero-bias 1.12 1.33 mid-infrared, respectively, they increased 1.71 1.79 when drops thermoelectric cooling 220 K. Besides, such an also slightly improves working frequency bandwidth response speed. This work provides promising way high-efficiency polarization-independent different electromagnetic wave ranges.